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t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 1 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com qfn 5x5 mm 32l p ad configuration p ad no. symbol 1 - 2, 4, 6, 8 - 9, 16 - 17,19, 21, 23 - 25, 32 gnd 3, 7, 10 - 15, 18, 22, 2 7 - 31 nc 5 rf in 2 0 rf out, drain 2 6 gate applications ? commercial and military ra dar ? communication s ? electronic warfare general description triquints tga2237 - sm is a wide b and distributed a mplifier fabricated on triquint s production 0.25um gan on sic process . the tga2237 - sm operates from 0. 03 C 2.5 ghz and provides greater than 1 0 w of saturated output power with greater than 1 3 db of large signal gain and greater than 5 0 % power - added efficiency. t he tga2237 - sm is available in a low - cost, surface mount 32 lead 5x5 ain qfn. it is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. the tg a2237 - sm is fully matched to 50? at bo th rf ports allowing for simple system integration. dc blocks are required on both rf ports and the drain voltage must be injected through an off chip bias - tee on the rf output port . lead - free and rohs compliant. evaluation boards are available upon request. ordering information part eccn description tga2 237 - sm ear99 0.03 C 2.5 ghz 1 0 w gan power amplifier product features ? frequency range: 0.03 C 2.5 ghz ? p sat : > 4 0 dbm at p in = 27dbm ? p1db: >33 dbm ? pae : > 5 0 % ? large signal gain: >13 db ? small signal gain: > 19 db ? input return loss: >10db ? output return loss: >12db ? bias : v d = 3 2 v , i dq = 360 ma , v g = - 2. 6 v typical ? wideband flat power ? package dimensions: 5.0 x 5.0 x 1.45 mm functional block diagram 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 32 31 30 29 28 27 26 25 rf in rf out
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 2 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 4 0v gate voltage range (v g ) - 8 to 0v drain current (i d ) 1.2 a gate current (i g ) - 2.4 to 8.4 ma power dissipation (p diss ) , 85c 19 w input power (p in ) , cw, 50 , 85c 33 dbm (*) input power (p in ) , cw, vswr 3 :1, v d = 32 v, 85c 33 dbm (*) max vswr, cw, p in = 27dbm, v d = 32v, 85c (load) 10:1 channel t emperature (t ch ) 275c mounting temperature (30 seconds) 320c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 3 2 v drain current (i d q ) 360 m a gate voltage (v g ) - 2. 6 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. (*) operational input power must be limited to 26dbm when operating below 0.6ghz t o prevent excessive forward gate current. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 3 2 v, i d q = 360 m a, v g = - 2.6 v typical parameter min typical max units operational frequency range 0. 03 2.5 ghz small signal gain > 19 db input return loss > 10 db output return loss > 1 2 db output power (pin = 27 dbm) > 40 db m power added efficiency (pin = 27 dbm) > 50 % power @ 1db compression (p1db) > 3 3 db m im3 @ p out /t one = 3 0 dbm - 2 5 dbc im5 @ p out /tone = 30 dbm - 3 3 dbc small signal gain temperature coefficient - 0.0 3 db/ c output power temperature coefficient - 0.00 2 dbm/ c recommended operating voltage: 20 32 v
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 3 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , v d = 32 v i d q = 360ma, i d _drive = 630ma p in = 27dbm, p out = 40dbm, p diss = 10w 10.2 oc/w channel temperature (t ch ) (under rf drive) 187 c median lifetime (t m ) 4.12 x 10^7 hrs notes: 1. thermal resistance measured to back of package. test conditions: v d = 40 v; failure criteria = 10% reduction in i d_max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13 8.0 8.5 9.0 9.5 10.0 10.5 11.0 3 4 5 6 7 8 9 10 11 12 13 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = +85 c cw 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 0.5 1 1.5 2 2.5 power dissipation (w) frequency (ghz) p diss vs. frequency vs. t base -40c +25c +85c p in = 27dbm v d = 32v, i dq = 360ma
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 4 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) typical performance : small signal -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 32 v, i dq = 360ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 32 v, i dq = 360ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s11 (db) frequency (ghz) input return loss vs. freq. vs. v d 32v 30v 28v 25v temp. = +25 c i dq = 360ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s22(db) frequency (ghz) output return loss vs. freq. vs. v d 32v 30v 28v 25v temp. = +25 c i dq = 360ma 10 12 14 16 18 20 22 24 26 28 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 32 v, i dq = 360ma 10 12 14 16 18 20 22 24 26 28 0 0.5 1 1.5 2 2.5 3 3.5 4 s21 (db) frequency (ghz) gain vs. frequency vs. v d 25v 28v 30v 32v temp. = +25 c i dq = 360ma
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 5 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance: large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1) 30 32 34 36 38 40 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. v d vd=20v vd=25v vd=28v vd=30v vd=32v p in = 27dbm temp. = +25 c i dq = 360ma 35 40 45 50 55 60 65 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. v d vd=20v vd=25v vd=28v vd=30v vd=32v p in = 27dbm temp. = +25 c i dq = 360ma 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power 22dbm 24dbm 26dbm 27dbm temp. = +25 c v d = 32v, i dq = 360ma 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 32v, i dq = 360ma 35 40 45 50 55 60 65 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 27dbm v d = 32v, i dq = 360ma 35 40 45 50 55 60 65 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power 22dbm 24dbm 26dbm 27dbm temp. = +25 c v d = 32v, i dq = 360ma
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 6 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. i dq 120ma 240ma 360ma p in = 27dbm temp. = +25 c v d = 32v 35 40 45 50 55 60 65 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. i dq 120ma 240ma 360ma p in = 27dbm temp. = +25 c v d = 32v 16 19 22 25 28 31 34 37 40 43 0 3 6 9 12 15 18 21 24 27 p out (dbm) input power (dbm) output power vs. input power vs. freq. 0.1ghz 1.0ghz 1.6ghz 2.4ghz temp. = +25 c v d = 32v, i dq = 360ma 0 10 20 30 40 50 60 70 0 3 6 9 12 15 18 21 24 27 pae (%) input power (dbm) pae vs. input power vs. freq. 2.4ghz 1.6ghz 1.0ghz 0.1ghz temp. = +25 c v d = 32v, i dq = 360ma 10 12 14 16 18 20 22 24 26 0 3 6 9 12 15 18 21 24 27 gain (db) input power (dbm) power gain vs. input power vs. freq. 0.1ghz 1.0ghz 1.6ghz 2.4ghz temp. = +25 c v d = 32v, i dq = 360ma 12 14 16 18 20 22 24 0 3 6 9 12 15 18 21 24 27 gain (db) input power (dbm) power gain vs. input power vs. temp. -40c +25c +85c freq. = 1.6ghz v d = 32v, i dq = 360ma
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 7 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) 100 200 300 400 500 600 700 0 3 6 9 12 15 18 21 24 27 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 2.4ghz 1.6ghz 1.0ghz 0.1ghz temp. = +25 c v d = 32v, i dq = 360ma 100 200 300 400 500 600 700 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. i dq 32v120ma 32v240ma 32v360ma p in = 27dbm temp. = +25 c 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0 0.5 1 1.5 2 2.5 3 3.5 4 gate current (ma) frequency (ghz) gate current vs. frequency vs. i dq 32v120ma 32v240ma 32v360ma p in = 27dbm temp. = +25 c 100 200 300 400 500 600 700 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 32v, i dq = 360ma -2 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 4 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 32v, i dq = 360ma -1 1 3 5 7 9 11 19 20 21 22 23 24 25 26 27 28 gate current (ma) input power (dbm) gate current vs. input power vs. freq. 0.05ghz 0.1ghz 0.2ghz 0.4ghz 0.6ghz 0.8ghz 1.0ghz 1.6ghz temp. = +25 c v d = 32v, i dq = 360ma p in is limited to 26dbm for frequency below 0.6ghz due to high gate current.
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 8 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : linearity the plots reflect performance measured with an external coaxial bias tee and dc blocks (s ee application circuit on page 1 1 ) -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq v d = 32v, 2.0ghz, 1mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq v d = 32v, 2.0ghz, 1mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temperature v d = 32v, i dq = 360ma, 2.0ghz, 1mhz tone spacing - 40 c +25 c +85 c -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temperature v d = 32v, i dq = 360ma, 2.0ghz, 1mhz tone spacing - 40 c +25 c +85 c -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 32v, i dq = 360ma, 1mhz tone spacing temp. = +25 c 2.5ghz 2.0ghz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 32v, i dq = 360ma, 1mhz tone spacing temp. = +25 c 2.5ghz 2.0ghz
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 9 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : linearity the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 1 ) -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. temp. freq. = 2.0ghz +85 c +25 c - 40 c v d = 32v, i dq = 360ma -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. temp. freq. = 2.0ghz +85 c +25 c - 40 c v d = 32v, i dq = 360ma -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. v d /i d . freq. = 2.0ghz temp. = +25 c 32v240ma 32v120ma 32v360ma -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. v d /i d . freq. = 2.0ghz temp. = +25 c 32v240ma 32v120ma 32v360ma -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. freq. v d = 32v, i dq = 360ma temp. = +25 c 2.0ghz 1.5ghz 1.0ghz 2.5ghz -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. freq. v d = 32v, i dq = 360ma temp. = +25 c 2.0ghz 1.5ghz 1.0ghz 2.5ghz
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 10 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com typical performance : large signal (cw) , on - board vs. external coaxial bias - t the plots below reflect performance measured between external bias tee and on - board bias tee ( see application circuit on pages 11 and 1 3 ) 30 35 40 45 50 55 60 65 70 75 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power external bias-t on-board bias-t temp. = +25 c v d = 30v, i dq = 360ma p in = 27dbm 35 36 37 38 39 40 41 42 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power external bias-t on-board bias-t temp. = +25 c v d = 30v, i dq = 360ma p in = 27dbm
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 11 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note s : 1. coaxial input dc block (c3 ) is used for input port (rf in.) 2. external wide bandwidth b ias - t ee is used for output port (rf out). v d is applied through the o utput bias - tee . (*) p in is l imit ed to 26dbm for f requency < 0.6 ghz due to high gate current. application circuit ( coaxial input dc block and coaxial output bias tee ) bias - up procedure 1. set i d limit to 70 0ma, i g limit to 7 ma 2. set v g to - 5.0v 3. set v d +3 2 v 4 . adjust v g more positive until i dq = 360ma (v g ~ - 2.6 v typical) 5 . apply rf signal * bias - down procedure 1. turn off rf signal 2. reduce v g to - 5.0v. ensure i dq ~ 0ma 3 . set v d to 0v 4 . turn off v d supply 5 . turn off v g supply
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 12 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com assembly drawing (coaxial input dc block and coaxial output bias tee) bill of materials reference design value description manufacturer part number c1 1 000p f cap, 0402, 10 0v, 10%, x7r various c 2 1 uf cap, 1206, 5 0v, 10%, x7r various c 3 dc block various r1 C r 2 10? res, 0402 various
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 13 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com note s : 1. performance of the dut with surface mount dc blocks and bias tee components may be degraded relative to the coaxial option. these components should be optimize d for the desired operational band width . application circuit (option with board - level dc blocks and o utput b ias t ee )
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 14 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com evaluation board layout w ith on - b oard dc b locks and o utput bia s - t option bill of materials for on - board bias - tee reference design value description manufacturer part number c1, c4, c5, c 7 1000pf cap, 0402, 100v, 10%, x7r various c2 1u f cap, 1206, 5 0v, 10%, x 7 r various c 6 0.01uf cap, 1206, 100v, 10%, x 7 r various l1 330nh ind , 1206, 100v, 10%, x 7 r various r1 C r 4 10? res, 0402 various
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 15 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com pin layout pin layout pin description pin no. symbol description 1 - 2 , 4, 6, 8 - 9, 16 - 17, 19, 21, 23 - 25, 32 gnd connected to ground paddle (pin 33); must be grounded on pcb 3 , 7, 10 - 15, 18, 22 , 2 7 - 31 nc no connection 5 rf in in put; matched to 50 . 20 rf out/ drain out put; matched to 50 . 2 6 gate gate voltage; bias network is required; see recommended a pplication information on page 11 33 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance.
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 16 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com mechanical information units: inches tolerances: unless specified x.xx = 0.01 x.xxx = 0.005 materials: base: ceramic lid: plastic all metalized features are gold plated part is epoxy sealed marking: 2237 : part number yy: part assembly year ww: part assembly week mxxx: batch id
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 17 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com recommended soldering temperature profile
t ga2237 - sm 0.03 C 2.5ghz 10w gan power amplifier preliminary datasheet: rev - 06 - 03 - 14 - 18 of 18 - disclaimer: subject to change without notice ? 2014 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assume s no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user . all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or aut horized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 msl rating level tbd at 260 c convection reflow the part is ra ted moisture sensitivity level tbd at tbd c per jedec standard ipc/jedec j - std - 020. solderability compatible with the latest version of j - std - 020 lead free solder, 260 c . this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : ear99

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